TK62N60W5,S1VF

MOSFET DTMOSIV 600V 45mOhm 61.8A 400W 6500pF

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MOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF
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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	400 W
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	205 nC
Minimum Operating Temperature	-
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	DTMOSIV
Id - Continuous Drain Current	61.8 A
Mounting Style	Through Hole
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	36 mOhms
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	400 W
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	205 nC
Minimum Operating Temperature	-
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	DTMOSIV
Id - Continuous Drain Current	61.8 A
Mounting Style	Through Hole
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	36 mOhms
Configuration	Single
Channel Mode	Enhancement