TK62J60W,S1VQ

MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC

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R 285.39

R 253.24

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MOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC

Products specifications

Technology	Si
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Qg - Gate Charge	180 nC
Pd - Power Dissipation	30 W
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	61.8 A
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Technology	Si
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Qg - Gate Charge	180 nC
Pd - Power Dissipation	30 W
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	61.8 A
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel