TK5Q65W,S1Q

MOSFET Power MOSFET N-Channel

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R 25.67

R 24.88

R 14.10

R 13.89

R 12.70

R 12.39

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MOSFETs Power MOSFET N-Channel

Products specifications

Rds On - Drain-Source Resistance	1.02 Ohms
Vgs th - Gate-Source Threshold Voltage	2.5 V
Pd - Power Dissipation	60 W
Configuration	Single
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	5.2 A
Qg - Gate Charge	10.5 nC
Mounting Style	Through Hole
Packaging	Tube
Channel Mode	Enhancement
Tradename	DTMOSIV
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Rds On - Drain-Source Resistance	1.02 Ohms
Vgs th - Gate-Source Threshold Voltage	2.5 V
Pd - Power Dissipation	60 W
Configuration	Single
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	5.2 A
Qg - Gate Charge	10.5 nC
Mounting Style	Through Hole
Packaging	Tube
Channel Mode	Enhancement
Tradename	DTMOSIV
Number of Channels	1 Channel
Transistor Polarity	N-Channel