TK5Q60W,S1VQ

MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC

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MOSFETs DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC
Lead Time: 47 Days

Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Mounting Style	Through Hole
Qg - Gate Charge	10.5 nC
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Vgs th - Gate-Source Threshold Voltage	3.7 V
Rds On - Drain-Source Resistance	770 mOhms
Configuration	Single
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	5.4 A

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Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Mounting Style	Through Hole
Qg - Gate Charge	10.5 nC
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Vgs th - Gate-Source Threshold Voltage	3.7 V
Rds On - Drain-Source Resistance	770 mOhms
Configuration	Single
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	5.4 A