TK5P60W,RVQ

MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF

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MOSFETs DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF
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Products specifications

Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Qg - Gate Charge	10.5 nC
Technology	Si
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	DTMOSIV
Id - Continuous Drain Current	5.4 A
Pd - Power Dissipation	60 W
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Rds On - Drain-Source Resistance	770 mOhms
Configuration	Single

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Products specifications

Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Qg - Gate Charge	10.5 nC
Technology	Si
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	DTMOSIV
Id - Continuous Drain Current	5.4 A
Pd - Power Dissipation	60 W
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.7 V
Rds On - Drain-Source Resistance	770 mOhms
Configuration	Single