MOSFETs Power MOSFET N-Channel
Lead Time: 0 Days
Products specifications
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Technology | Si |
Id - Continuous Drain Current | 5.2 A |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Pd - Power Dissipation | 30 W |
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 10.5 nC |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 650 V |
Rds On - Drain-Source Resistance | 1 Ohms |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |