TK5A65D(STA4,Q,M)

MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm

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MOSFETs N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
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Products specifications

Transistor Polarity	N-Channel
Technology	Si
Rds On - Drain-Source Resistance	1.43 Ohms
Mounting Style	Through Hole
Id - Continuous Drain Current	5 A
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Number of Channels	1 Channel

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Products specifications

Transistor Polarity	N-Channel
Technology	Si
Rds On - Drain-Source Resistance	1.43 Ohms
Mounting Style	Through Hole
Id - Continuous Drain Current	5 A
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Number of Channels	1 Channel