MOSFETs N-Ch MOS 4.5A 650V 35W 700pF 1.67 Ohm
Products specifications
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 1.67 Ohms |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 5 A |
Pd - Power Dissipation | 35 W |
Technology | Si |
Configuration | Single |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |