TK5A60W,S4VX

MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC

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MOSFETs N-Ch 9.7A 100W FET 600V 380pF 20nC
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Products specifications

Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	770 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Technology	Si
Pd - Power Dissipation	30 W
Qg - Gate Charge	10.5 nC
Id - Continuous Drain Current	5.4 A
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.7 V

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Products specifications

Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	770 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Technology	Si
Pd - Power Dissipation	30 W
Qg - Gate Charge	10.5 nC
Id - Continuous Drain Current	5.4 A
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.7 V