TK58E06N1,S1X

MOSFET 60V N-Ch PWR FET 105A 110W 46nC

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R 34.26

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MOSFETs 60V N-Ch PWR FET 105A 110W 46nC

Products specifications

Id - Continuous Drain Current	105 A
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	5.4 mOhms
Mounting Style	Through Hole
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Qg - Gate Charge	46 nC

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Products specifications

Id - Continuous Drain Current	105 A
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	110 W
Rds On - Drain-Source Resistance	5.4 mOhms
Mounting Style	Through Hole
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Qg - Gate Charge	46 nC