TK58A06N1,S4X

MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V

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MOSFETs MOSFET NCh 4.4ohm VGS10V10uAVDS60V
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Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Mounting Style	Through Hole
Technology	Si
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	4.4 mOhms
Transistor Polarity	N-Channel
Id - Continuous Drain Current	58 A
Channel Mode	Enhancement
Qg - Gate Charge	46 nC
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	35 W

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Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Mounting Style	Through Hole
Technology	Si
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	4.4 mOhms
Transistor Polarity	N-Channel
Id - Continuous Drain Current	58 A
Channel Mode	Enhancement
Qg - Gate Charge	46 nC
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	35 W