TK56E12N1,S1X

MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC
Lead Time: 131 Days

SKU: TK56E12N1,S1X

Availability: 183 in stock

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MOSFETs N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC
Lead Time: 42 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Pd - Power Dissipation	168 W
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	112 A
Qg - Gate Charge	69 nC
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	5.8 mOhms
Channel Mode	Enhancement
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V

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Products specifications

Vds - Drain-Source Breakdown Voltage	120 V
Pd - Power Dissipation	168 W
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole
Id - Continuous Drain Current	112 A
Qg - Gate Charge	69 nC
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	5.8 mOhms
Channel Mode	Enhancement
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V