TK56A12N1,S4X

MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V

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R 23.72

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MOSFETs MOSFET NCh6.2ohm VGS10V10uAVDS120V

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	6.2 mOhms
Id - Continuous Drain Current	56 A
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	45 W
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	120 V
Configuration	Single
Qg - Gate Charge	69 nC
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	6.2 mOhms
Id - Continuous Drain Current	56 A
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	45 W
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	120 V
Configuration	Single
Qg - Gate Charge	69 nC
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole