TK560P65Y,RQ

MOSFET N-Ch DTMOSV 650V 60W 380pF 7.0A

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MOSFETs N-Ch DTMOSV 650V 60W 380pF 7.0A
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Products specifications

Minimum Operating Temperature	-
Rds On - Drain-Source Resistance	430 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	14.5 nC
Channel Mode	Enhancement
Configuration	Single
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	7 A
Tradename	DTMOSV
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V
Technology	Si
Packaging	Cut Tape, Reel

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Products specifications

Minimum Operating Temperature	-
Rds On - Drain-Source Resistance	430 mOhms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	14.5 nC
Channel Mode	Enhancement
Configuration	Single
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	7 A
Tradename	DTMOSV
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V
Technology	Si
Packaging	Cut Tape, Reel