TK55S10N1,LQ

MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK

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MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK
Lead Time: 38 Days

Products specifications

Configuration	Single
Pd - Power Dissipation	100 W
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	5.5 mOhms
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	55 A
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	49 nC
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel

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Products specifications

Configuration	Single
Pd - Power Dissipation	100 W
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	5.5 mOhms
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	55 A
Vds - Drain-Source Breakdown Voltage	100 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	49 nC
Number of Channels	1 Channel
Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel