TK4R4P06PL,RQ

MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W

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MOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W
Lead Time: 161 Days

Products specifications

Rds On - Drain-Source Resistance	3.4 mOhms
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Configuration	Single
Qg - Gate Charge	48.2 nC
Channel Mode	Enhancement
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	87 W
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, Reel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Id - Continuous Drain Current	106 A

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Products specifications

Rds On - Drain-Source Resistance	3.4 mOhms
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Configuration	Single
Qg - Gate Charge	48.2 nC
Channel Mode	Enhancement
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	87 W
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, Reel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs th - Gate-Source Threshold Voltage	1.5 V
Id - Continuous Drain Current	106 A