TK4R3E06PL,S1X

MOSFET N-Ch 60V 3280pF 48.2nC 106A 87W
Lead Time: 170 Days

SKU: TK4R3E06PL,S1X

Availability: 11311 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

500+

1000+

2500+

5000+

Price

R 42.43

R 36.37

R 20.08

R 18.42

R 16.21

R 15.60

R 14.86

Free shipping

MOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W
Lead Time: 0 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Mounting Style	Through Hole
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	3.3 mOhms
Qg - Gate Charge	48.2 nC
Vgs th - Gate-Source Threshold Voltage	1.5 V
Id - Continuous Drain Current	106 A
Configuration	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	87 W
Vgs - Gate-Source Voltage	20 V
Technology	Si

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Mounting Style	Through Hole
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	3.3 mOhms
Qg - Gate Charge	48.2 nC
Vgs th - Gate-Source Threshold Voltage	1.5 V
Id - Continuous Drain Current	106 A
Configuration	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	87 W
Vgs - Gate-Source Voltage	20 V
Technology	Si