MOSFET N-Ch MOS 4A 550V 80W 490pF 1.88
Products specifications
Rds On - Drain-Source Resistance | 1.88 Ohms |
Configuration | Single |
Technology | Si |
Id - Continuous Drain Current | 4 A |
Pd - Power Dissipation | 80 W |
Packaging | Reel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |