TK4A65DA(STA4,Q,M)

MOSFET N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm

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R 27.14

R 24.53

R 21.48

R 20.08

R 19.61

R 17.92

R 17.02

R 16.68

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MOSFETs N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm

Products specifications

Rds On - Drain-Source Resistance	1.9 Ohms
Transistor Polarity	N-Channel
Id - Continuous Drain Current	4 A
Technology	Si
Number of Channels	1 Channel
Pd - Power Dissipation	35 W
Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single
Mounting Style	Through Hole

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Products specifications

Rds On - Drain-Source Resistance	1.9 Ohms
Transistor Polarity	N-Channel
Id - Continuous Drain Current	4 A
Technology	Si
Number of Channels	1 Channel
Pd - Power Dissipation	35 W
Vds - Drain-Source Breakdown Voltage	650 V
Configuration	Single
Mounting Style	Through Hole