TK4A60D(STA4,Q,M)

MOSFET N-Ch FET 600V 2.5s IDSS 10 uA

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MOSFETs N-Ch FET 600V 2.5s IDSS 10 uA
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Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	1.7 Ohms
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Number of Channels	1 Channel
Technology	Si
Id - Continuous Drain Current	4 A

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Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	1.7 Ohms
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Number of Channels	1 Channel
Technology	Si
Id - Continuous Drain Current	4 A