MOSFET N-ch 600V 3.5A TO-220SIS
Products specifications
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Qg - Gate Charge | 11 nC |
Id - Continuous Drain Current | 3.5 A |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 4.4 V |
Vds - Drain-Source Breakdown Voltage | 600 V |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 1.7 Ohms |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 35 W |
Channel Mode | Enhancement |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |