TK4A55DA(STA4,Q,M)

MOSFET N-Ch MOS 3.5A 550V 30W 380pF 2.45 Ohm

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R 22.29

R 19.53

R 17.42

R 16.00

R 15.42

R 14.10

R 12.97

R 12.73

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MOSFETs N-Ch MOS 3.5A 550V 30W 380pF 2.45 Ohm

Products specifications

Pd - Power Dissipation	30 W
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	2.45 Ohms
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	4 A
Vds - Drain-Source Breakdown Voltage	550 V

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Products specifications

Pd - Power Dissipation	30 W
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	2.45 Ohms
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	4 A
Vds - Drain-Source Breakdown Voltage	550 V