TK4A53D(STA4,Q,M)

MOSFET N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm

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R 21.50

R 18.34

R 17.52

R 15.55

R 15.21

R 13.91

R 12.60

R 12.36

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MOSFETs N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm

Products specifications

Vds - Drain-Source Breakdown Voltage	525 V
Configuration	Single
Technology	Si
Rds On - Drain-Source Resistance	1.7 Ohms
Pd - Power Dissipation	35 W
Mounting Style	Through Hole
Number of Channels	1 Channel
Id - Continuous Drain Current	4 A
Transistor Polarity	N-Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	525 V
Configuration	Single
Technology	Si
Rds On - Drain-Source Resistance	1.7 Ohms
Pd - Power Dissipation	35 W
Mounting Style	Through Hole
Number of Channels	1 Channel
Id - Continuous Drain Current	4 A
Transistor Polarity	N-Channel