TK49N65W,S1F

MOSFET N-Ch Power MOSFET Transistor

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R 224.52

R 206.60

R 175.50

R 172.08

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MOSFETs N-Ch Power MOSFET Transistor
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Products specifications

Qg - Gate Charge	160 nC
Configuration	Single
Pd - Power Dissipation	400 W
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	49.2 A
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	55 mOhms
Technology	Si
Number of Channels	1 Channel
Mounting Style	Through Hole
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C

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Products specifications

Qg - Gate Charge	160 nC
Configuration	Single
Pd - Power Dissipation	400 W
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	49.2 A
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	55 mOhms
Technology	Si
Number of Channels	1 Channel
Mounting Style	Through Hole
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C