TK49N65W,S1F(S

MOSFET Power MOSFET 49.2A 400W 650V

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MOSFETs Power MOSFET 49.2A 400W 650V

Products specifications

Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Packaging	Tube
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	55 mOhms
Mounting Style	Through Hole
Id - Continuous Drain Current	49.2 A
Qg - Gate Charge	160 nC
Pd - Power Dissipation	400 W
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V

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Products specifications

Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Packaging	Tube
Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	55 mOhms
Mounting Style	Through Hole
Id - Continuous Drain Current	49.2 A
Qg - Gate Charge	160 nC
Pd - Power Dissipation	400 W
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	2.5 V