TK42E12N1,S1X

MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC

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MOSFETs N-Ch 88A 140W FET 120V 3100pF 52nC
Lead Time: 51 Days

Products specifications

Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	88 A
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	52 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	7.8 mOhms
Vds - Drain-Source Breakdown Voltage	120 V
Pd - Power Dissipation	140 W
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	88 A
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	52 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	7.8 mOhms
Vds - Drain-Source Breakdown Voltage	120 V
Pd - Power Dissipation	140 W
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C