TK42A12N1,S4X

MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V

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MOSFETs MOSFET NCh7.8ohm VGS10V10uAVDS120V
Lead Time: 118 Days

Products specifications

Number of Channels	1 Channel
Rds On - Drain-Source Resistance	7.8 mOhms
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	52 nC
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Id - Continuous Drain Current	42 A
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Through Hole
Pd - Power Dissipation	35 W
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Number of Channels	1 Channel
Rds On - Drain-Source Resistance	7.8 mOhms
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	52 nC
Vgs th - Gate-Source Threshold Voltage	4 V
Technology	Si
Id - Continuous Drain Current	42 A
Vds - Drain-Source Breakdown Voltage	120 V
Mounting Style	Through Hole
Pd - Power Dissipation	35 W
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single