MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08
Products specifications
Vds - Drain-Source Breakdown Voltage | 600 V |
Packaging | Tube |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 5 V |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 40 A |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 55 nC |
Pd - Power Dissipation | 320 W |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 65 mOhms |