TK40E06N1,S1X

MOSFET 100V N-Ch PWR FET 60A 67W 23nC

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MOSFETs 60V N-Ch PWR FET 60A 67W 23nC
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Products specifications

Rds On - Drain-Source Resistance	10.4 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Id - Continuous Drain Current	60 A
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	67 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	23 nC
Vds - Drain-Source Breakdown Voltage	60 V

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Products specifications

Rds On - Drain-Source Resistance	10.4 mOhms
Configuration	Single
Transistor Polarity	N-Channel
Id - Continuous Drain Current	60 A
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	67 W
Mounting Style	Through Hole
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	23 nC
Vds - Drain-Source Breakdown Voltage	60 V