TK40A10N1,S4X

MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V

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MOSFETs MOSFET NCh6.8ohm VGS10V10uAVDS100V
Lead Time: 56 Days

Products specifications

Qg - Gate Charge	49 nC
Id - Continuous Drain Current	40 A
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	35 W
Technology	Si
Rds On - Drain-Source Resistance	6.8 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	100 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Qg - Gate Charge	49 nC
Id - Continuous Drain Current	40 A
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	35 W
Technology	Si
Rds On - Drain-Source Resistance	6.8 mOhms
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	100 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel