MOSFETs MOSFET NCh 8.4ohm VGS10V10uAVDS60V
Lead Time: 0 Days
Products specifications
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 8.4 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 23 nC |
Vds - Drain-Source Breakdown Voltage | 60 V |
Channel Mode | Enhancement |
Pd - Power Dissipation | 30 W |
Id - Continuous Drain Current | 40 A |
Configuration | Single |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |