TK3R1P04PL,RQ

MOSFET N-Ch 40V 4670pF 60nC 130A 87W

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MOSFETs N-Ch 40V 4670pF 60nC 130A 87W
Lead Time: 191 Days

Products specifications

Technology	Si
Pd - Power Dissipation	87 W
Number of Channels	1 Channel
Id - Continuous Drain Current	130 A
Packaging	Cut Tape, Reel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	40 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Qg - Gate Charge	60 nC
Configuration	Single
Rds On - Drain-Source Resistance	2.5 mOhms

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Products specifications

Technology	Si
Pd - Power Dissipation	87 W
Number of Channels	1 Channel
Id - Continuous Drain Current	130 A
Packaging	Cut Tape, Reel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	40 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Qg - Gate Charge	60 nC
Configuration	Single
Rds On - Drain-Source Resistance	2.5 mOhms