TK3R1E04PL,S1X

MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W

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MOSFETs N-Ch 40V 4670pF 63.4nC 128A 87W

Products specifications

Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Qg - Gate Charge	63.4 nC
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.5 mOhms
Channel Mode	Enhancement
Id - Continuous Drain Current	128 A
Configuration	Single
Mounting Style	Through Hole
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1.4 V
Pd - Power Dissipation	87 W
Vgs - Gate-Source Voltage	20 V

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Products specifications

Maximum Operating Temperature	+ 175 C
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	40 V
Qg - Gate Charge	63.4 nC
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.5 mOhms
Channel Mode	Enhancement
Id - Continuous Drain Current	128 A
Configuration	Single
Mounting Style	Through Hole
Technology	Si
Vgs th - Gate-Source Threshold Voltage	1.4 V
Pd - Power Dissipation	87 W
Vgs - Gate-Source Voltage	20 V