MOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W
Lead Time: 60 Days
Products specifications
Vgs th - Gate-Source Threshold Voltage | 1.4 V |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Technology | Si |
Mounting Style | Through Hole |
Pd - Power Dissipation | 36 W |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 40 V |
Maximum Operating Temperature | + 175 C |
Number of Channels | 1 Channel |
Qg - Gate Charge | 63.4 nC |
Rds On - Drain-Source Resistance | 2.5 mOhms |
Id - Continuous Drain Current | 82 A |
Vgs - Gate-Source Voltage | 20 V |