TK3A65D(STA4,Q,M)

MOSFET N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm

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R 21.61

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MOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm
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Products specifications

Configuration	Single
Id - Continuous Drain Current	3 A
Mounting Style	Through Hole
Pd - Power Dissipation	35 W
Technology	Si
Vds - Drain-Source Breakdown Voltage	650 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.25 Ohms
Transistor Polarity	N-Channel

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Products specifications

Configuration	Single
Id - Continuous Drain Current	3 A
Mounting Style	Through Hole
Pd - Power Dissipation	35 W
Technology	Si
Vds - Drain-Source Breakdown Voltage	650 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	2.25 Ohms
Transistor Polarity	N-Channel