TK3A65DA(STA4,QM)

MOSFET N-Ch MOS 2.5A 650V 35W 490pF 2.51

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R 16.97

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R 15.31

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MOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51

Products specifications

Mounting Style	Through Hole
Rds On - Drain-Source Resistance	2.51 Ohms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	35 W
Id - Continuous Drain Current	2.5 A

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Products specifications

Mounting Style	Through Hole
Rds On - Drain-Source Resistance	2.51 Ohms
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	35 W
Id - Continuous Drain Current	2.5 A