TK3A60DA(STA4,Q,M)

MOSFET N-ch 600V 2.5A 30w 2.8 Ohm

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MOSFETs N-ch 600V 2.5A 30w 2.8 Ohm
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Products specifications

Packaging	Tube
Technology	Si
Rds On - Drain-Source Resistance	2.8 Ohms
Mounting Style	Through Hole
Pd - Power Dissipation	30 W
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	2.5 A
Configuration	Single

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Products specifications

Packaging	Tube
Technology	Si
Rds On - Drain-Source Resistance	2.8 Ohms
Mounting Style	Through Hole
Pd - Power Dissipation	30 W
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	2.5 A
Configuration	Single