TK39N60X,S1F

MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V)

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R 139.93

R 128.33

R 101.72

R 98.03

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MOSFETs DTMOSIV-H/S 600V 65mOhmmax(VGS=10V)
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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	85 nC
Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	55 mOhms
Id - Continuous Drain Current	38.8 A
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3.5 V
Pd - Power Dissipation	270 W

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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	85 nC
Vgs - Gate-Source Voltage	30 V
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	55 mOhms
Id - Continuous Drain Current	38.8 A
Vds - Drain-Source Breakdown Voltage	600 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Tradename	DTMOSIV
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3.5 V
Pd - Power Dissipation	270 W