TK39N60W,S1VF

MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF

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R 113.84

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R 80.37

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R 67.46

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MOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
Lead Time: 52 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	38.8 A
Qg - Gate Charge	110 nC
Pd - Power Dissipation	270 W
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	55 mOhms
Technology	Si
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	DTMOSIV

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	38.8 A
Qg - Gate Charge	110 nC
Pd - Power Dissipation	270 W
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	55 mOhms
Technology	Si
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	DTMOSIV