TK39N60W5,S1VF

MOSFET Power MOSFET N-Channel

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R 158.11

R 139.93

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R 79.58

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MOSFETs Power MOSFET N-Channel
Lead Time: 168 Days

Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	62 mOhms
Packaging	Tube
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	DTMOSIV
Technology	Si
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	38.8 A
Pd - Power Dissipation	270 W
Qg - Gate Charge	135 nC

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Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3 V
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	62 mOhms
Packaging	Tube
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Tradename	DTMOSIV
Technology	Si
Vgs - Gate-Source Voltage	30 V
Id - Continuous Drain Current	38.8 A
Pd - Power Dissipation	270 W
Qg - Gate Charge	135 nC