TK39J60W,S1VQ

MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC

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MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 110nC

Products specifications

Qg - Gate Charge	135 nC
Technology	Si
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	65 mOhms
Transistor Polarity	N-Channel
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	38.8 A
Number of Channels	1 Channel
Pd - Power Dissipation	270 W
Vgs - Gate-Source Voltage	10 V

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Products specifications

Qg - Gate Charge	135 nC
Technology	Si
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	65 mOhms
Transistor Polarity	N-Channel
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	38.8 A
Number of Channels	1 Channel
Pd - Power Dissipation	270 W
Vgs - Gate-Source Voltage	10 V