TK39J60W5,S1VQ

MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
Lead Time: 420 Days

SKU: TK39J60W5,S1VQ

Availability: 39 in stock

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R 274.32

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R 165.75

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MOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC
Lead Time: 41 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	38.8 A
Technology	Si
Minimum Operating Temperature	- 55 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3.7 V
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	55 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	110 nC
Channel Mode	Enhancement
Pd - Power Dissipation	270 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	38.8 A
Technology	Si
Minimum Operating Temperature	- 55 C
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3.7 V
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	55 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	110 nC
Channel Mode	Enhancement
Pd - Power Dissipation	270 W