TK39A60W,S4VX

MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A

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MOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
Lead Time: 25 Days

Products specifications

Tradename	DTMOSIV
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Technology	Si
Pd - Power Dissipation	50 W
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Qg - Gate Charge	110 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	55 mOhms
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	38.8 A

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Products specifications

Tradename	DTMOSIV
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Technology	Si
Pd - Power Dissipation	50 W
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Transistor Polarity	N-Channel
Qg - Gate Charge	110 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	55 mOhms
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	3.7 V
Id - Continuous Drain Current	38.8 A