TK380P65Y,RQ

MOSFET N-Ch DTMOSV 650V 80W 590pF 9.7A

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MOSFETs N-Ch DTMOSV 650V 80W 590pF 9.7A
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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	290 mOhms
Technology	Si
Minimum Operating Temperature	-
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	9.7 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	80 W
Vgs - Gate-Source Voltage	30 V
Packaging	Cut Tape, Reel
Qg - Gate Charge	20 nC
Configuration	Single
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Tradename	DTMOSV

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	290 mOhms
Technology	Si
Minimum Operating Temperature	-
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	9.7 A
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	80 W
Vgs - Gate-Source Voltage	30 V
Packaging	Cut Tape, Reel
Qg - Gate Charge	20 nC
Configuration	Single
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Tradename	DTMOSV