TK35N65W,S1F

MOSFET MOSFET NChannel 068ohm DTMOS

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MOSFETs MOSFET NChannel 068ohm DTMOS

Products specifications

Vgs th - Gate-Source Threshold Voltage	3.5 V
Pd - Power Dissipation	270 W
Configuration	Single
Technology	Si
Rds On - Drain-Source Resistance	68 mOhms
Vds - Drain-Source Breakdown Voltage	650 V
Qg - Gate Charge	100 nC
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	35 A
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3.5 V
Pd - Power Dissipation	270 W
Configuration	Single
Technology	Si
Rds On - Drain-Source Resistance	68 mOhms
Vds - Drain-Source Breakdown Voltage	650 V
Qg - Gate Charge	100 nC
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	35 A
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C