TK35N65W5,S1F

MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS

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R 167.86

R 150.21

R 126.49

R 123.85

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MOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS
Lead Time: 77 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	4.5 V
Qg - Gate Charge	115 nC
Pd - Power Dissipation	270 W
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	35 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	80 mOhms
Technology	Si
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4.5 V
Qg - Gate Charge	115 nC
Pd - Power Dissipation	270 W
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	35 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	80 mOhms
Technology	Si
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	650 V
Channel Mode	Enhancement
Configuration	Single