MOSFETs MOSFET NChannel 068ohm DTMOS
Products specifications
Mounting Style | Through Hole |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 50 W |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Configuration | Single |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 35 A |
Channel Mode | Enhancement |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Qg - Gate Charge | 100 nC |
Rds On - Drain-Source Resistance | 68 mOhms |