TK35A65W5,S5X

MOSFET Power MOSFET N-Channel

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MOSFETs Power MOSFET N-Channel
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Products specifications

Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	80 mOhms
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	115 nC
Pd - Power Dissipation	50 W
Id - Continuous Drain Current	35 A
Mounting Style	Through Hole
Technology	Si
Packaging	Tube

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Products specifications

Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Rds On - Drain-Source Resistance	80 mOhms
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	115 nC
Pd - Power Dissipation	50 W
Id - Continuous Drain Current	35 A
Mounting Style	Through Hole
Technology	Si
Packaging	Tube