TK35A08N1,S4X

MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V

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MOSFETs MOSFET NCh 10ohm VGS10V10uAVDS80V
Lead Time: 97 Days

Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Qg - Gate Charge	25 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Mounting Style	Through Hole
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	10 mOhms
Id - Continuous Drain Current	35 A
Vds - Drain-Source Breakdown Voltage	80 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	30 W

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Products specifications

Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Qg - Gate Charge	25 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Configuration	Single
Mounting Style	Through Hole
Technology	Si
Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	10 mOhms
Id - Continuous Drain Current	35 A
Vds - Drain-Source Breakdown Voltage	80 V
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	30 W