TK34A10N1,S4X

MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V

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MOSFETs MOSFET NCh 8 mOhms VGS10V10uAVDS100V
Lead Time: 132 Days

Products specifications

Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	35 W
Rds On - Drain-Source Resistance	7.9 mOhms
Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Technology	Si
Mounting Style	Through Hole
Id - Continuous Drain Current	34 A
Qg - Gate Charge	38 nC

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Products specifications

Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	35 W
Rds On - Drain-Source Resistance	7.9 mOhms
Channel Mode	Enhancement
Configuration	Single
Vds - Drain-Source Breakdown Voltage	100 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Technology	Si
Mounting Style	Through Hole
Id - Continuous Drain Current	34 A
Qg - Gate Charge	38 nC